收藏本站
W971GG6JB
Function Truth Table, continued
CURRENT
STATE
Write
Recovering
Write
Recovering
with Auto-
precharge
Refreshing
Mode
Register
Accessing
CS
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
RAS
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
L
CAS
X
H
L
L
H
H
L
L
X
H
L
L
H
H
L
L
X
H
L
L
H
H
L
L
X
H
L
L
H
H
L
L
WE
X
H
H
L
H
L
H
L
X
H
H
L
H
L
H
L
X
H
H
L
H
L
H
L
X
H
H
L
H
L
H
L
ADDRESS
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
COMMAND
DSL
NOP
READ/READA
WRIT/WRITA
ACT
PRE/PREA
REF/SELF
MRS/EMRS
DSL
NOP
READ/READA
WRIT/WRITA
ACT
PRE/PREA
REF/SELF
MRS/EMRS
DSL
NOP
READ/READA
WRIT/WRITA
ACT
PRE/PREA
REF/SELF
MRS/EMRS
DSL
NOP
READ/READA
WRIT/WRITA
ACT
PRE/PREA
REF/SELF
MRS/EMRS
ACTION
NOP-> Bank active after t WR
NOP-> Bank active after t WR
ILLEGAL
New write
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP-> Precharge after t WR
NOP-> Precharge after t WR
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP-> Idle after t RC
NOP-> Idle after t RC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP-> Idle after t MRD
NOP-> Idle after t MRD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOTES
1
1
1
1
1
1
1
Notes:
1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in “ IDLE ” .
3. Read or Write burst interruption is prohibited for burst length of 4 and only allowed for burst length of 8. Burst read/write can
only be interrupted by another read/write with 4 bit burst boundary. Any other case of read/write interrupt is not allowed.
Remark: H = High level, L = Low level, X = High or Low level ( Don?t Care ), V = Valid data.
Publication Release Date: Sep. 24, 2013
- 35 -
Revision A09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
W9751G6KB-25 IC DDR2 SDRAM 512MBIT 84WBGA
W9812G6JH-6I IC SDRAM 128MBIT 54TSOPII
相关代理商/技术参数
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
W971GG6JB25ITR 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-800, X16, IND TEMP
W971GG6JB25TR 制造商:Winbond Electronics Corp 功能描述:NR, DDR2-800, X16
W971GG6JB-3 制造商:Winbond Electronics Corp 功能描述:1GBIT DDRII
W971GG6KB-18 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-1066, X16 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W971GG8JB 制造商:WINBOND 制造商全称:Winbond 功能描述:16M × 8 BANKS × 8 BIT DDR2 SDRAM
W971GG8JB-25 功能描述:IC DDR2 SDRAM 1GBIT 60WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘
W9725G6IB-25 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR)